Samsung and Nvidia are working together on a new type of memory chip that could change how AI hardware is built and powered.
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The two companies, along with researchers from the Georgia Institute of Technology, have co-developed an AI model called a Physics-Informed Neural Operator, or PINO. The goal is to speed up research into ferroelectric NAND flash memory.
Ferroelectric NAND is made using ferroelectric materials instead of conventional silicon. These materials can hold data without needing a constant power supply, making them attractive for energy-efficient chips.
Samsung has been leading research into this technology for some time. Last year, the company published findings in the journal Nature showing ferroelectric NAND can reduce power consumption by 96% compared to standard NAND.
That’s a number worth pausing on. For AI workloads that demand enormous energy, a 96% reduction in memory power use would be a meaningful development.
The catch has always been research speed. Simulating and improving chip performance characteristics — things like threshold voltage and data retention — requires a tool called Technology Computer-Aided Design, or TCAD.
TCAD typically takes around 60 hours per operation. That bottleneck slows down how quickly engineers can test and refine chip designs.
The PINO model the joint team developed changes that. It can run the same analysis in under 10 seconds.
Nvidia is Samsung’s largest memory customer. The two companies already have a deep commercial relationship, which makes this R&D collaboration a natural extension.
SK Hynix, Samsung’s South Korean rival, currently supplies most of Nvidia’s high-bandwidth memory (HBM) chips. Samsung has been working to close that gap, and a deeper partnership on next-gen memory technology fits that strategy.
Micron Technology (MU) also competes in this space, making HBM chips for the AI chip market.
The research findings from the PINO project have been released publicly. The work is now moving toward commercialization, with Samsung expected to partner with Nvidia on the next phase of ferroelectric NAND development.
Samsung’s financials remain solid. The company posted trailing twelve-month revenue of $234.73 billion with an operating margin of 13.07%.
Its debt-to-equity ratio sits at just 0.06, and its current ratio is 2.33, pointing to a well-capitalized balance sheet with room to invest in long-term R&D.
The P/E ratio stands at 28.43, which is on the higher end historically. RSI readings suggest the stock is currently in overbought territory, something traders may want to keep an eye on.
Institutional ownership is low at 2%, and no insider trading activity has been reported over the past year.
Neither Nvidia nor Samsung responded to media requests for comment at the time of reporting.
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